Share:

Technical specifications:

Micron brand DDR4 is manufactured at Micron factories around the world, including Virginia, Japan, and Taiwan.

RAM capacity 1x – 4 GB.
RAM type PC4-19200 DDR4 SDRAM.
RAM speed 2400 MHz.
Memory module: 2400MT/s 38-38-38.
Supply voltage: 1.2 V – 1.2 V.
Capacity: Single module: 4 GB.
Timing diagram: CL38.

AXON 8800-16000 mAh uninterruptible power supply for router

👉 More about AXON UPS with manual quality control

Operating temperature: -40 C to +95 C, 0 C to +95 °C.

Dimensions: 69.6 mm x 30 mm.
| Height (transverse) 30 mm.
– total board length 70 mm.
Ø Diagonal 75 mm.
,,, number of Pins: 72 contacts -split key- 58 contacts x2 contacts 130.

Microprocessors memory 4.
There are no cooling radiators.

Color – Black.

One hole for clamping the board latches on both sides.

– DDR4 added several new power saving features compared to DDR3, including: 1. Reduced power pseudo-open drain drivers for DQ pins. 2. Additional ODT input buffer shutdown mode for power-down function. 3. Additional maximum power saving mode function. 4. Additional command address (CAL) delay.

– DDR4 supports a DLL disable mode similar to the DLL disable mode in DDR3, up to 125 MHz.

– DDR4 now has a test connection mode to simplify testing with a controller that supports edge scan. Designed to work with an edge scan device, CT mode is supported by all Micron 4/8/16Gb devices (although JEDEC only requires it for x16). The CT model allows the edge scan device to load and read a pattern from DDR4 in CT mode. DDR4 does not directly support IEEE 1149.1.

– DDR4 retained the 8-bit prefetching used by DDR3; thus, BL8 is still supported.

– A DDR4 block is different from a DDR3 block. However, DDR4 uses the same package dimensions and pin/ball pitch as DDR3.

– DDR3 requires VDD and VDDQ equal to 1.5 V, VREFCA equal to 0.5 x VDD, and VREFDQ equal to 0.5 x VDDQ, while DDR4 requires VDD and VDDQ equal to 1.2 V, VREFCA equal to 0.5 x VDD, and VPP equal to 2.5 V.

– DDR4 still uses the VTT termination on the data bus for good signal quality, however it uses pseudo-open drain drivers for lower switching current compared to full push-pull drivers.

– DDR4 does not require an external VREFDQ, but provides an internally generated VREFDQ that requires calibration by the DRAM controller.

– DDR4 is backward compatible with DDR3-1333.

For systems that don't need a speed increase above DDR3-1333 and DDR3-1600, DDR4 can support these slow bandwidth requirements with significantly lower power requirements.

DDR4 FEATURES/OPTIONS/TECHNOLOGIES:

Voltage (core and input/output) 1.2 V./V.

ADVANTAGE – reduces memory power consumption.

VREF 1 – CMD/ADDR – VREFDQ inputs are now internal.

Low voltage standard! no – memory power reduction.

Data transfer rate (Mbps) 1600MHz/1866MHz/2133MHz/2400MHz/2666MHz/3200Mhz – Transition to high-speed I/O.

Densities 2GB–16GB. – Best options for high-capacity memory subsystems.

Domestic banks 16. – More banks.

Banking Groups (BG) 4. – Faster packet access.

tCK – DLL enabled 667 MHz to 1.6 GHz. – Higher data transfer rate.

t CK – DLL disabled Undefined up to 125 MHz.

DDR4 – DLL-off is now fully supported.

AL + CL read delay. – Extended values.

AL + CWL write delay. – Extended values.

DQ (ALT) 48 Ohm Driver. – Optimized for PtP (point-to-point) applications. 

DQ POD12 Bus – I/O and power noise reduction.

RTT values (in Ω Ohms) 240, 120, 80, 60, 48, 40, 34 – Support for higher data rates.

RTT is prohibited!

Turns off during READ packets – Ease of use.

ODT Modes Named, Dynamic, Parked – Additional control mode; supports changing the OTF value.

ODT control ODT signaling is not required.